Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on growth aluminum thin films a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed strong (0001) fiber texture for both Si(100) (111) substrates, hetero-epitaxial AlN layer, which is only few nanometers in size, grown MBE onthe Si(111) substrate. SEM images XRD characterization have shown an enhancement crystallinity. Raman spectroscopy indicated that film was relaxed when it Si(111), compression under tension MBE/Si(111) respectively. interface between abrupt well defined, contrary to using PVD MBE. Nevertheless, obtained temperature (<250 °C).